Schottky contacts to In2O3

Schottky contacts to In2O3

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n-type binary creta girl wig compound semiconductors such as InN, InAs, or In2O3 are especial because the branch-point energy or charge neutrality level lies within the conduction band.Their tendency to form a surface electron accumulation layer prevents the formation of rectifying Schottky contacts.Utilizing a reactive sputtering process in an oxygen-containing atmosphere, we demonstrate Schottky barrier diodes on indium oxide thin films with rectifying properties being sufficient for space charge layer spectroscopy.

Conventional non-reactive sputtering resulted in ohmic contacts.We compare the rectification of Pt, Pd, and Au Schottky contacts on In2O3 jean louis sanchet and discuss temperature-dependent current-voltage characteristics of Pt/In2O3 in detail.The results substantiate the picture of oxygen vacancies being the source of electrons accumulating at the surface, however, the position of the charge neutrality level and/or the prediction of Schottky barrier heights from it are questioned.